| 1. | The crystal grains propagate with prolonging the annealing time
随着硫化时间的延长，薄膜晶粒呈长大趋势。 |
| 2. | If the anneal temperature is increased or the anneal time prolonged , the pl intensity could be raised in evidence
但随沉积温度升高，其发光特性反而减弱甚至消失。 |
| 3. | High anneal temperature and long anneal time do good on increasing the size and density of silicon nano - crystals
退火后薄膜中的晶粒尺寸和密度都有所提高，退火温度升高或退火时间延长都有助于结晶状态的改善。 |
| 4. | The visible optical absorption of the film increases with increasing annealing time , coating - annealing time and concentration of the starting solution
样品的可见光区光吸收率随着初始溶液浓度、退火时间、涂膜厚度的增加而增加。 |
| 5. | We also optimized the parameters of growth process , based on the investigation of film character , produced at different temperature and different anneal time
通过研究不同温度、不同保温时间对薄膜生长的影响，得到了优化的薄膜生长参数。 |
| 6. | When anneal temperature is below 600 , the crystallinity can not be improved obviously for short anneal time , but the crystallization trend appear
退火处理后的薄膜结构分析表明，退火温度低于600时，短时间退火不能明显改善结晶状况，但结晶趋势明显。 |
| 7. | Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
随着退火时间的延长氧沉淀尺寸增大，密度略有增加；随着退火温度的升高，氧沉淀尺寸相对减小。 |
| 8. | With the prolongation of the annealing time at 400 " c and sokpa , the energy gap and the electrical resistivity increase and all the thin films trend to n - type semiconductors
400 、 80kpa硫化时，薄膜均呈n型导电特性，而且随着硫化时间的延长，薄膜禁带宽度及电阻率增大。 |
| 9. | In the experiments , we also found the - sources flow rate , temperate of the substrates , annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在实验过程中，我们也发现-族源气体的流量比、衬底温度、退火时间和退火温度对外延晶体的生长质量也有重要的影响。 |
| 10. | By analyzing the microstructure and phase composition of sm - fe alloy annealed and nitrided for different time using scanning electron microscopy and x - ray diffraction technique , the optimum values for the annealing time and the nitriding time is determined
通过对不同退火时间和氮化时间下材料的扫描电子显微分析和x -射线衍射分析，确定了最佳的退火时间和氮化时间。 |
